• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
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  • 优先权
    • 专利摘要:
    PURPOSE: A thin film bulk acoustic resonator is provided to reduce a whole size of a mobile communication device by forming previously a package to be mounted on the mobile communication device. CONSTITUTION: A thin film bulk acoustic resonator includes a wafer, a lower electrode, a piezoelectric layer, an upper electrode, an upper glass wafer, and a lower glass wafer. A support layer and an insulating layer are formed on an upper side and a lower side of the wafer(21). The lower electrode(24), the piezoelectric layer(25), and the upper electrode(26) are laminated on the support layer. The upper glass wafer(29) includes a depressed region(27) and a through-hole. The depressed region is formed on an upper side of the upper electrode. A power line is inserted into the through-hole. The lower glass wafer(31) is formed at a lower side of the insulating layer.
    公开号:KR20040066631A
    申请号:KR1020030003755
    申请日:2003-01-20
    公开日:2004-07-27
    发明作者:신진현
    申请人:엘지이노텍 주식회사；
    IPC主号:
    专利说明:

    Structure of Thin Film Bulk Acoustic Resonator
    [13] The present invention relates to the structure of a thin film bulk acoustic resonator (hereinafter referred to as 'TFBAR'), in particular, in the process of forming a bulk-type thin-film bulk elastic resonator By forming the package, a separate large-sized mounting package is not required at the time of mounting and mounting of the resonator, so that the size of the entire resonator and the package can be reduced, thereby making it possible to contribute more to the miniaturization of the mobile communication terminal. We propose a structure of a resonator.
    [14] In recent years, with the development of information and communication technology, the mobile communication terminal has become an indispensable device for modern people, and along with this, the mobile communication terminal has been miniaturized in order to make it portable.
    [15] In accordance with the trend of miniaturization of such mobile communication terminals, the high frequency transmission / reception bandpass filter has a surface acoustic wave resonator or bulk acoustic wave resonator instead of a conventional dielectric resonator (DR). Is being applied.
    [16] On the other hand, the present invention relates to the volume acoustic wave resonator, the volume acoustic wave resonator has been in the spotlight because the center frequency is good, its characteristics are excellent, and can be manufactured in a very small size. Specific methods for implementing such volume acoustic wave resonators include Bulk Micro-machined TFBAR, Surface Micro-machined TFBAR, Over-moded TFBAR, and Solidly Mounted Resonator (SMR) type TFBAR. The present invention relates to a bulk micro-machined TFBAR, and when expressed in Korean, it can be understood as a volumetric precisely processed thin film type volume elastic resonator, and the configuration of the present invention will be described using the English original.
    [17] The bulk micro-machined TFBAR described above has the advantage of high stability in the manufacturing process, but has the disadvantage of increasing the size of the device by a process of etching the lower surface. In addition, since a bulky package is required in the process of mounting the device, there is a problem in that it is difficult to mount it in a mobile terminal which has been miniaturized.
    [18] BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view illustrating a bulk micro-machined TFBAR of a conventional volumetric precision machining thin film type elastic resonator.
    [19] Referring to FIG. 1, a support layer 4 formed of silicon nitride (SiN x ), a lower electrode 3 sequentially formed above the support layer 4, a piezoelectric layer 2, The upper electrode 1 is formed. The lower side of the support layer 4 includes a silicon wafer 5 on which the etching region 6 is formed and an insulating layer 7 made of silicon nitride (SiN x ).
    [20] The piezoelectric layer 2 is vibrated by the power supplied from the electrodes 3 and 1, so that the piezoelectric layer 2 can be operated as a resonator.
    [21] FIG. 2 is a view illustrating that a package is formed by mounting a bulk micro-machined TFBAR.
    [22] Referring to FIG. 2, a resonator as already described in FIG. 1, and a certain package structure is inevitably required in order to be stably mounted and kept stable from external influences. In detail, a wire 16 for supplying power to the electrodes 1 and 3, a contact pad 12 for contacting one end of the wire 16, and the contact pad 12 are inward. A case 11 formed on the inner side of the case 11 and a case 11 having a through hole 11a through which a wire is inserted below the contact pad 12, and a stem 14 formed therein; A cap 15 for covering the upper side of the case 11 so that the resonant element is stably protected, and a foot pad connected to a circuit board under the case 11 to supply power; 10) and a paste 13 formed on the lower side of the resonant element and made of silver so that the resonant element is placed inside the case 11.
    [23] As described above, the conventional bulk micro-machined TFBAR requires a large mounting package in order to allow the already formed resonator to be mounted in the circuit board. There is a big problem in installing in a small mobile terminal.
    [24] In addition, the silicon wafer 5 is anisotropically etched by etching to form an etching region (see 6 in FIG. 1), which is larger in size than other types of resonators by the etching process. Volumetric Machining Bulk Micro-machined TFBARs are larger in size than other types of resonators.
    [25] In addition, there is also a problem that the operation process is complicated, such as protecting the upper side of the resonator during anisotropic etching and removing it after the etching is performed.
    [26] The present invention has been made to solve the problems described above, by forming a package to be mounted on the circuit board integrally during the formation of the resonant element, thereby reducing the size of the entire element included in the package, the volume elasticity An object of the present invention is to propose a structure of a resonator.
    [27] In addition, an object of the present invention is to propose a thin film type volume elastic resonator capable of simplifying a process of installing the thin film type volume elastic resonator, thereby improving work efficiency.
    [1] 1 is a cross-sectional view of a conventional bulk micro-machined bulk elastic resonator (TFBAR).
    [2] 2 is a view illustrating that a package is formed by mounting a conventional bulk micro-machined TFBAR.
    [3] 3 is a cross-sectional view of a thin film type volume elastic resonator according to the present invention;
    [4] 4 to 10 are diagrams for explaining a process of forming a thin film type volume elastic resonator according to the present invention in order.
    [5] <Explanation of symbols for the main parts of the drawings>
    [6] 1, 26: upper electrode 2, 25: piezoelectric layer 3, 24: lower electrode
    [7] 4, 22: support layer 5, 21: silicon wafer 6, 30: etching region
    [8] 7, 23: insulation layer 16: wire 10: foot pad
    [9] 11 case 11a, 28 through hole 12 contact pad
    [10] 13: paste 14: stem 15: cap
    [11] 27: recessed area 29: upper glass wafer
    [12] 31: lower glass wafer
    [28] According to an aspect of the present invention, there is provided a structure of a thin film type volume elastic resonator, including: a wafer having support layers and insulating layers formed on upper and lower sides thereof; A lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked above the support layer; An upper glass on which the lower electrode, the piezoelectric layer, and the upper electrode are recessed, has a recessed area in which a lower side thereof is recessed, and a passage hole through which power lines contacting the upper electrode and the lower electrode are inserted. A wafer; A lower glass wafer is formed below the insulating layer to protect the resonator.
    [29] In addition, the method of forming the thin film type volume elastic resonator according to the present invention comprises the steps of forming an insulating layer and a support layer on the lower side and the upper side of the silicon wafer, respectively; Depositing a lower electrode, a piezoelectric layer, and an upper electrode on the support layer; Bonding an upper glass wafer to an upper side of the upper electrode, the recessed region being formed below the upper electrode; Forming a through hole for penetrating power through the upper glass wafer to the upper electrode and the lower electrode; Etching an underside of the silicon wafer to form an etching region; And bonding the lower glass wafer to the lower side of the etching region.
    [30] According to the configuration as described above, there is an effect that can reduce the overall size of the device by forming a predetermined package in the forming step of the resonator. Thus, when installed inside the mobile terminal or the like, when viewed as the overall size including the mounting package, the size is reduced, thereby reducing the size of the mobile terminal.
    [31] Hereinafter, with reference to the drawings present a detailed embodiment of the present invention. However, the scope of protection according to the spirit of the present invention is not limited to the embodiments presented.
    [32] 3 is a cross-sectional view of the structure of the thin film type volume elastic resonator according to the present invention.
    [33] Referring to FIG. 3, a silicon wafer 21 and an insulating layer 23 on which an upper electrode 26, a piezoelectric layer 25, a lower electrode 24, a support layer 22, and an etching region 30 are formed are formed. do.
    [34] In particular, the upper side of the upper electrode 26 is a recessed area (Recess area) 27 for embedding the device and a passage hole 28 in which a wire for supplying power to the electrodes 24 and 26 is interpolated. Upper glass wafers 29 are formed.
    [35] In addition, the lower glass wafer 31 is formed under the insulating layer 23 for the purpose of the lower package for protecting the lower part of the resonance element.
    [36] By the above-described configuration, in particular, the upper glass wafer 29, during the anisotropic etching process for forming the etching region 30, the etching solution is prevented from contacting the electrode and the piezoelectric layer 25, The stability of the phase can be added. In addition, since the wire is inserted and formed through the through hole 28 of the upper glass wafer 29, the application of power can also be made conveniently.
    [37] In addition, since the upper glass wafer 29 and the lower glass wafer 31 are formed above and below the resonator, the resonator may be protected and mounted so that a package for separate mounting is not required when the resonator is placed on a circuit board. do.
    [38] As a result, since it can be mounted on a circuit board such as a mobile terminal even without a mounting package, the overall size is reduced when it is mounted inside the electronic device, thereby further contributing to the miniaturization of the electronic product.
    [39] Hereinafter, the process of forming the structure of the thin film type volume elastic resonator according to the present invention will be described in order using a separate drawing.
    [40] 4 to 10 are diagrams sequentially illustrating the formation process of the thin film type volume elastic resonator according to the present invention.
    [41] Referring to FIG. 4, first, a support layer 22 and an insulating layer 23 are formed above and below the silicon wafer 21. The support layer 22 and / or the insulating layer 23 is deposited by a predetermined deposition method such as silicon oxide (SiO 2 ), low stress silicon nitride (SiN x ) or tensile stress silicon nitride (SiN x ).
    [42] Referring to FIG. 5, the lower electrode 24 is formed on the support layer 22. The lower electrode 24 is deposited by gold / titanium or gold / chromium or platinum / titanium or platinum / chromium or aluminum or molybdenum or tungsten or molybdenum / titanium by sputtering, radio frequency (RF) sputtering, chemical vapor deposition, etc. It is formed.
    [43] Referring to FIG. 6, a piezoelectric material is deposited on the lower electrode 24 to form a piezoelectric layer 25. The piezoelectric layer 25 is made of aluminum nitride (AlN), zinc oxide (ZnO), quartz (Quartz) (SiO 2 ), gallium arsenide (GaAs), PZT (Plumbum Zirconium Titanum, lead zirconium titanium) and the like. And sputtering or high frequency sputtering or sublimation or chemical vapor deposition to form a pattern, and is formed.
    [44] Referring to FIG. 7, an upper electrode 26 is formed on the piezoelectric layer 25. The upper electrode 26 is the same as the lower electrode 24, gold / titanium or gold / chromium or platinum / titanium or platinum / chromium or aluminum or molybdenum or tungsten or molybdenum / titanium sputtering, high frequency sputtering, chemical vapor deposition It may be deposited and patterned by, for example.
    [45] Referring to FIG. 8, an upper glass wafer 29 is bonded on the support layer 22. The upper glass wafer 29 includes a recessed area 27 for allowing the resonator to be interpolated, and a wire inserted through the upper glass wafer 29 to contact the electrodes 24 and 26. In order to include the through hole 28 is formed.
    [46] The upper glass wafer 29 not only protects the piezoelectric layer 25 and the electrodes 24 and 26, but also when the silicon wafer 21 formed below is anisotropically etched, the piezoelectric layer 25 and The electrodes 24, 26, etc. serve as a cap to be protected. That is, by functioning as a constant protective layer during the wafer forming process, it is possible to reduce the process of forming the resonator and increase the work efficiency.
    [47] In addition, the passage hole 28 for passing the wires in contact with the electrodes 24 and 26 may be formed before bonding, or after the upper glass wafer 29 is bonded, hydrogen fluoride (HF) may be formed. Wet etching or dry etching may be used.
    [48] Referring to FIG. 9, after the upper glass wafer 29 is bonded to the upper side, free standing is formed by an anisotropic etching of the silicon wafer 21 under the resonator. Etch area 30 is to be made.
    [49] The etching region 30 forms an etching window through wet etching using phosphoric acid or dry etching using sulfur fluoride (SF 6 ), and potassium hydroxide (KOH). Alternatively, silicon (Si), which is a main component of the silicon wafer 21, is etched by using an anisotropic etching solution such as EDP (Ethylene Diamine Pyrocatechole, ethylene diamine pyrocatechol), or TMAH (TetraMethylAmmonium Hydrooxide). can do.
    [50] Referring to FIG. 10, a lower glass wafer 31 is formed below the silicon wafer 21 on which the etching region 30 is formed. In detail, the lower glass wafer 31 is bonded to the lower side of the insulating layer 23.
    [51] Through the series of processes described above, the glass wafers 29 and 31 are formed on the lower side and the upper side of the resonator, thereby protecting the upper side and the lower side of the resonator. In addition, a wire for applying power may pass through the passage hole 28 formed through the upper glass wafer 29 to contact the electrodes 24 and 26.
    [52] Due to this configuration, the volumetric precisely processed thin film type volume elastic resonator, which is the subject of the present invention, can be mounted and used on a circuit board even without a separate mounting package for mounting on the circuit board.
    [53] Since the volume-precision thin film type volume elastic resonator according to the present invention is formed by adding a predetermined configuration in which the upper side and the lower side of the resonator can be protected, respectively, in the wafer formation step, separate protection is performed at the time of mounting the circuit board of the resonant element. There is no need to provide a package, and the overall size is reduced.
    [54] In addition, it is possible to sufficiently protect the resonator by preventing the etching liquid from contacting the upper side of the resonator during the anisotropic etching process of the silicon wafer, and the characteristics of the process can be further improved.
    [55] The volume-precision thin film type volume elastic resonator according to the present invention can be mounted in a smaller size when it is mounted in an information communication device such as a mobile communication terminal by forming a package for mounting in a mobile communication terminal in the wafer formation step in advance. There is an effect that can reduce the size of the portable information communication device more.
    [56] In addition, there is an effect that the resonator can be manufactured more reliably by further increasing the reliability in a manufacturing process such as an etching process.
    [57] And since the glass wafer is formed as a constant protective layer on the upper and lower sides, there is an effect that the handling of the resonator by the operator can be made more easily and stably.
    权利要求:
    Claims (3)
    [1" claim-type="Currently amended] A wafer on which support layers and insulating layers are formed above and below;
    A lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked above the support layer;
    An upper glass on which the lower electrode, the piezoelectric layer, and the upper electrode are recessed, has a recessed area in which a lower side thereof is recessed, and a passage hole through which power lines contacting the upper electrode and the lower electrode are inserted. A wafer;
    And a lower glass wafer formed under the insulating layer to protect the piezoelectric layer.
    [2" claim-type="Currently amended] The method of claim 1,
    And the upper glass wafer and / or the lower glass wafer are bonded to each other.
    [3" claim-type="Currently amended] Forming an insulating layer and a support layer on the lower side and the upper side of the silicon wafer, respectively;
    Depositing a lower electrode, a piezoelectric layer, and an upper electrode on the support layer;
    Bonding an upper glass wafer to an upper side of the upper electrode, the recessed region being formed below the upper electrode;
    Forming a through hole for penetrating power through the upper glass wafer to the upper electrode and the lower electrode;
    Etching an underside of the silicon wafer to form an etching region; And
    Bonding a lower glass wafer to the lower side of the etching region.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2003-01-20|Application filed by 엘지이노텍 주식회사
    2003-01-20|Priority to KR1020030003755A
    2004-07-27|Publication of KR20040066631A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020030003755A|KR20040066631A|2003-01-20|2003-01-20|Structure of Thin Film Bulk Acoustic Resonator|
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